Modeling of a breakdown voltage in microdischarges

Breakdown Voltage of High-voltage GaN FETs

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...

a swot analysis of the english program of a bilingual school in iran

با توجه به جایگاه زبان انگلیسی به عنوان زبانی بین المللی و با در نظر گرفتن این واقعیت که دولت ها و مسئولان آموزش و پرورش در سراسر جهان در حال حاضر احساس نیاز به ایجاد موقعیتی برای کودکان جهت یاد گیری زبان انگلیسی درسنین پایین در مدارس دو زبانه می کنند، تحقیق حاضر با استفاده از مدل swot (قوت ها، ضعف ها، فرصتها و تهدیدها) سعی در ارزیابی مدرسه ای دو زبانه در ایران را دارد. جهت انجام این تحقیق در م...

Breakdown behaviour of high-voltage GaN-HEMTs

Investigation of Voltage Breakdown Caused by Microparticles

Degradation of RF accelerating cavities caused by field emission currently limits the design of future linear accelerators. When field emission is the problem, foreign particles often deserve the blame, but they can be ”processed” away if the cavity electric field is high enough to initiate voltage breakdown near the particle site, in which case the troublesome particle vaporizes, leaving behin...

AC Microdischarges in Porous Ceramics

Generation of microdischarges inside porous ceramics by AC high voltage has been investigated. Electrical and optical measurements were performed to explore the physical properties of the microdischarges. The effect of pore size, discharge power and gas mixture on the discharge properties and development is described. Introduction Research of various types of non-thermal plasmas generated by el...